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| NPN BD683 PNP BD684 SILICON DARLINGTON POWER TRANSISTORS The BD683 is NPN eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. They are mounted in Jedec TO-126 plastic package. PNP complement is BD684. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base current (peak value) Total power Dissipation Junction Temperature Storage Temperature Ratings Value 120 140 5 IC ICM IBM @ Tmb = 25C 4 6 0.1 Unit V V V A A Watts C C IC IB PT TJ TStg 40 150 -65 to +150 THERMAL CHARACTERISTICS Symbol RthJ-mb RthJ-a Ratings Thermal Resistance, Junction to mouting base Thermal Resistance, Junction to ambient in free air Value 3.12 100 Unit K/W K/W COMSET SEMICONDUCTORS 1/3 NPN BD683 PNP BD684 ELECTRICAL CHARACTERISTICS TC=25C unless otherwise noted Symbol ICBO ICEO IEBO VCE(SAT) hFE VBE hfe fhfe VF I(SB) ton toff Ratings Collector cut-off current Collector cut-off current Emitter cut-offcurrent Collector-Emitter saturation Voltage DC Current Gain Test Condition(s) IE=0 , VCB= VCEOMAX=120 V IE=0 , VCB= 1/2VCBOMAX= 70V,Tj= 150C IB=0 , VCE= 1/2VCEOMAX=60 V IC=0, VEB=5 V IC=1.5 A, IB=6 mA Min Typ 750 10 0,8 2200 1500 60 0,8 4,5 Max 0,2 1 0,2 5 2,5 2,5 2 8 Unit mA mA mA V VCE=3 V, IC=500 mA VCE=3 V, IC=1,5 A VCE=3 V, IC=4 A VCE=3 V, IC=1,5 A Base-Emitter Voltage(1&2) VCE=3 V, IC=1,5 A, f= 1 MHz Small signal current gain VCE=3 V, IC=1,5 A Ut-off frequency IF=1,5 A Diode forward voltage Second-breakdown collector VCE=50 V, tP= 20ms,non rep., without heatsink current V kHz A s Turn-on time Icon= 1,5A, Ibon= -Iboff= 6mA, VCC=30V Turn-off time 1. Measured under pulse conditions :tP <300s, <2%. 2. VBE decreases by about 3,6 mV/K with increasing temperature. MECHANICAL DATA CASE TO-126 DIMENSIONS mm A B C D E F G H L M N P min max 7.4 7.8 10.5 10.8 2.4 2.7 0.7 0.9 2.2 typ. 0.49 0.75 4.4 typ. 2.54 typ. 15.7 typ. 1.2 typ. 3.8 typ. 3.0 3.2 Pin 1 : Pin 2 : Pin 3 : inches min max 0.295 0.307 0.413 0.425 0.094 0.106 0.027 0.035 0.087 typ. 0.019 0.029 0.173 typ. 0.100 typ. 0.618 typ. 0.047 typ. 0.149 typ. 0.118 0.126 Emitter Collector Base COMSET SEMICONDUCTORS 2/3 Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice. COMSET SEMICONDUCTORS 3/3 |
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